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| Ordering number : EN8522 2SA1011P / 2SC2344P SANYO Semiconductors DATA SHEET 2SA1011P / 2SC2344P Specifications ( ) : 2SA1011P Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Conditions Ratings (-)180 (-)160 (-)6 (--)1.5 (-)3 30 150 --55 to +150 Unit V V V A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(-)300mA VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz VCE=(--)5A, IC=(--)10mA IC=(--)500mA, IB=(--)50mA IC=(--)1mA, IE=0A IC=(--)1mA, RBE= IE=(--)1mA, IC=0A (--)180 (--)160 (--)6 60* 100 (30)23 (--)1.5 (-0.5)0.3 Ratings min typ max (--)10 (--)10 200* MHz pF V V V V V Unit A A Continued on next page. * : The 2SA1011P/2SC2344P are classified by 300mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62707DA TI IM TC-00000697 No.8522-1/4 2SA1011P / 2SC2344P Continued from preceding page. Parameter Turn-On Time Storage Time Fall Time Symbol ton tstg tf Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ (0.29)0.15 (0.48)0.81 (0.19)0.48 max Unit s s s Package Dimensions unit : mm (typ) 7507-001 10.2 5.1 2.7 Switching Time Test Circuit IB1 4.5 3.6 1.3 PW=20s INPUT IB2 1 OUTPUT 200VR 40 VCC=20V 6.3 51 15.1 1F VBE=--2V 1F 18.0 1.2 14.0 IC=10IB1=--10IB2=0.5A For PNP, minus sign is omitted. 0.4 (5.6) 0.8 123 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 2.55 2.55 --1.0 IC -- VCE 2SA1011P 1.0 IC -- VCE 2SC2344P A 8m 7mA 6mA 5mA Collector Current, IC -- A Collector Current, IC -- A --0.8 A --8m --7mA --6mA --5mA 0.8 --0.6 0.6 4mA 0.4 --4mA --0.4 --3mA --2mA --0.2 3mA 2mA 0.2 --1mA 0 0 --10 --20 1mA IB=0mA --30 --40 --50 IT02132 0 0 10 20 30 IB=0mA 40 50 IT02133 Collector to Emitter Voltage, VCE -- V --2.4 IC -- VBE Collector to Emitter Voltage, VCE -- V 2.4 IC -- VBE 2SA1011P VCE= --5V --2.0 2.0 2SC2344P VCE=5V Collector Current, IC -- A Collector Current, IC -- A --1.6 1.6 --1.2 1.2 75 C --0.8 0.8 25 C Ta= --25 C 5 C 5 C 0.4 0 0 0.2 0.4 0.6 75 0.8 --0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT02134 25 C Ta= --25 C 1.0 12 12 C 1.2 1.4 IT02135 Base to Emitter Voltage, VBE -- V Base to Emitter Voltage, VBE -- V No.8522-2/4 2SA1011P / 2SC2344P 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 hFE -- IC 2SA1011P VCE= --5V 75C 1000 7 5 3 hFE -- IC 75C 125C 25C 2SC2344P VCE=5V DC Current Gain, hFE DC Current Gain, hFE 125C 25C 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.01 2 3 5 Ta= --25C Ta= --25C 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 3 IT02136 5 Collector Current, IC -- A IT02137 f T -- IC VCE=10V 2SC2 344P Cob -- VCB f=1MHz Gain-Bandwidth Product, f T -- MHz 2 3 100 7 5 3 2 Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2SA101 1P 2SA1 011P 2SC2 344P 10 7 5 3 0.001 (For PNP minus sign is omitted) 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Collector to Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 5 7 1.0 IT02138 2 1.0 (For PNP minus sign is omitted) 2 3 5 7 10 2 3 5 VCE(sat) -- IC Collector to Base Voltage, VCB -- V 5 7 100 IT02139 ASO ICP=3A IC=1.5A 1m ms 100 IC / IB=10 3 2 Collector Current, IC -- A 1.0 7 DC 5 3 2 0.1 7 5 3 2 s ope rat ion ms 10 2SA 101 1P 44P 2SC 23 (For PNP minus sign is omitted) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 1.0 (For PNP minus sign is omitted) 2 3 5 7 10 2 3 5 Collector Current, IC -- A IT02140 Collector to Emitter Voltage, VCE -- V 7 100 2 IT02141 No.8522-3/4 2SA1011P / 2SC2344P SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No.8522-4/4 |
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